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This is N-channel MOSFET 85 A 55 V HEXFET 3-Pin TO-220AB manufactured by Infineon. The manufacturer part number is IRF1010NPBF. It has a maximum of 55 v drain source voltage. With a typical gate charge at Vgs includes 120 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 180 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product is available in [Cannel Type] channel. Whereas its minimum gate threshold voltage includes 2v. The product carries 4v of maximum gate threshold voltage. It provides up to 11 mω maximum drain source resistance. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 85 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. In addition, the height is 8.77mm. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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