Category:
Power MOSFET
Dimensions:
10.71 x 4.93 x 16.13mm
Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Width:
4.93mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220F
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
575 pF @ 25 V
Length:
10.71mm
Pin Count:
3
Typical Turn-Off Delay Time:
48 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
26 W
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
16.13mm
Typical Turn-On Delay Time:
14 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
580 mΩ
