Toshiba TK7P60W,RVQ(S N-channel MOSFET, 7 A, 600 V TK, 3-Pin DPAK

TK7P60W-RVQ-S Toshiba TK7P60W,RVQ(S N-channel MOSFET, 7 A, 600 V TK, 3-Pin DPAK
TK7P60W,RVQ(S
Toshiba

Product Information

Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
15 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
60 W
Series:
TK
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
3.7V
Height:
2.3mm
Width:
6.1mm
Length:
6.6mm
Maximum Drain Source Resistance:
600 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
7 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 7 A 600 V TK 3-Pin DPAK manufactured by Toshiba. The manufacturer part number is TK7P60W,RVQ(S. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 15 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 60 w maximum power dissipation. The product tk, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 3.7v of maximum gate threshold voltage. In addition, the height is 2.3mm. Furthermore, the product is 6.1mm wide. Its accurate length is 6.6mm. It provides up to 600 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. While 7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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TK7P60W, MOSFET Silicon N-Channel MOS (DTMOS IV)(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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