Diodes Inc ZVP2110GTA P-channel MOSFET, 310 mA, 100 V, 3+Tab-Pin SOT-223

ZVP2110GTA Diodes Inc  P-channel MOSFET, 310 mA, 100 V, 3+Tab-Pin SOT-223
DiodesZetex

Product Information

Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3.5V
Height:
1.65mm
Width:
3.55mm
Length:
6.55mm
Maximum Drain Source Resistance:
8 Ω
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
310 mA
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc P-channel MOSFET 310 mA 100 V 3+Tab-Pin SOT-223 manufactured by DiodesZetex. The manufacturer part number is ZVP2110GTA. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3.5v of maximum gate threshold voltage. In addition, the height is 1.65mm. Furthermore, the product is 3.55mm wide. Its accurate length is 6.55mm. It provides up to 8 ω maximum drain source resistance. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 310 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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