Infineon IRLML6246TRPBF N-channel MOSFET, 4.1 A, 20 V HEXFET, 3-Pin SOT-23

IRLML6246TRPBF Infineon  N-channel MOSFET, 4.1 A, 20 V HEXFET, 3-Pin SOT-23
IRLML6246TRPBF
Infineon

Product Information

Maximum Continuous Drain Current:
4.1 A
Transistor Material:
Si
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.1V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.5 nC @ 4.5 V
Channel Type:
N
Length:
3.04mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.3 W
Series:
HEXFET
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1.02mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
66 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 4.1 A 20 V HEXFET 3-Pin SOT-23 manufactured by Infineon. The manufacturer part number is IRLML6246TRPBF. While 4.1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1.1v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 3.5 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3.04mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.3 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 1.02mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 66 mω maximum drain source resistance.

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20V Single N-Channel HEXFET Power MOSFET Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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