Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
18 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.6 W
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1V
Height:
1mm
Width:
1.7mm
Length:
3.1mm
Maximum Drain Source Resistance:
51 mΩ
Package Type:
TSOP
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
5.8 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
39 Weeks
Detailed Description:
P-Channel 20V 3.7A (Ta) 700mW (Ta) Surface Mount 6-TSOP
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6
Base Part Number:
NTGS3136
Gate Charge (Qg) (Max) @ Vgs:
29nC @ 4.5V
Rds On (Max) @ Id, Vgs:
33mOhm @ 5.1A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
1901pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSOP
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
3.7A (Ta)
Customer Reference:
Power Dissipation (Max):
700mW (Ta)
Technology:
MOSFET (Metal Oxide)
