Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
10.8 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.3 W
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1.3V
Height:
0.9mm
Width:
2.3mm
Length:
2.9mm
Maximum Drain Source Resistance:
48 mΩ, 98 mΩ
Package Type:
ECH
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
5 A, 7.5 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
Base Part Number:
ECH8668
Detailed Description:
Mosfet Array N and P-Channel 20V 7.5A, 5A 1.5W Surface Mount 8-ECH
Input Capacitance (Ciss) (Max) @ Vds:
1060pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
10.8nC @ 4.5V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
17mOhm @ 4A, 4.5V
Drain to Source Voltage (Vdss):
20V
Package / Case:
8-SMD, Flat Lead
Supplier Device Package:
8-ECH
Manufacturer Standard Lead Time:
7 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
1.5W
Current - Continuous Drain (Id) @ 25°C:
7.5A, 5A
Manufacturer:
ON Semiconductor
