Maximum Drain Source Voltage:
75 V
Typical Gate Charge @ Vgs:
300 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
40 W
Maximum Gate Source Voltage:
±20 V
Height:
15.87mm
Width:
4.7mm
Length:
10.16mm
Maximum Drain Source Resistance:
11.4 mΩ
Package Type:
TO-220F
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
68 A
Forward Diode Voltage:
1.5V
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
BMS30
Detailed Description:
P-Channel 75V 68A (Ta) 2W (Ta), 40W (Tc) Through Hole TO-220F-3SG
Input Capacitance (Ciss) (Max) @ Vds:
13400pF @ 20V
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Mounting Type:
Through Hole
Rds On (Max) @ Id, Vgs:
8.5mOhm @ 34A, 10V
Drain to Source Voltage (Vdss):
75V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
300nC @ 10V
Supplier Device Package:
TO-220F-3SG
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Power Dissipation (Max):
2W (Ta), 40W (Tc)
Current - Continuous Drain (Id) @ 25°C:
68A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
