Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
0.7 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
280 mW
Maximum Gate Source Voltage:
-6 V, +6 V
Maximum Gate Threshold Voltage:
2.5V
Height:
0.6mm
Width:
1.3mm
Length:
1.7mm
Maximum Drain Source Resistance:
2.5 Ω
Package Type:
SOT-563
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
310 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
Base Part Number:
NTZD5110
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 60V 294mA 250mW Surface Mount SOT-563
Input Capacitance (Ciss) (Max) @ Vds:
24.5pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:
0.7nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Drain to Source Voltage (Vdss):
60V
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
1.6Ohm @ 500mA, 10V
Supplier Device Package:
SOT-563
Manufacturer Standard Lead Time:
47 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
250mW
Current - Continuous Drain (Id) @ 25°C:
294mA
Manufacturer:
ON Semiconductor
