Maximum Drain Source Voltage:
75 V
Typical Gate Charge @ Vgs:
280 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
90 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.6V
Height:
4.5mm
Width:
9.2mm
Length:
10mm
Maximum Drain Source Resistance:
11 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
50 Weeks
Base Part Number:
SMP3003
Detailed Description:
P-Channel 75V 100A (Ta) 90W (Tc) Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:
13400pF @ 20V
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
8mOhm @ 50A, 10V
Drain to Source Voltage (Vdss):
75V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
280nC @ 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max):
90W (Tc)
Current - Continuous Drain (Id) @ 25°C:
100A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
