Configuration:
Single
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Gate Source Voltage:
-25 V
Idss Drain-Source Cut-off Current:
min. 40mA
Source Gate On-Capacitance:
85pF
Height:
4.58mm
Width:
3.86mm
Length:
4.58mm
Maximum Drain Source Resistance:
12 Ω
Package Type:
TO-92
Maximum Drain Gate Voltage:
25V
Minimum Operating Temperature:
-55 °C
Drain Gate On-Capacitance:
85pF
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
REACH Status:
REACH Unaffected
Voltage - Cutoff (VGS off) @ Id:
2 V @ 10 nA
edacadModel:
J109 Models
FET Type:
N-Channel
Resistance - RDS(On):
12 Ohms
edacadModelUrl:
/en/models/1051153
Manufacturer:
onsemi
Voltage - Breakdown (V(BR)GSS):
25 V
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
17 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
-
Mounting Type:
Through Hole
Current - Drain (Idss) @ Vds (Vgs=0):
40 mA @ 15 V
Series:
-
Supplier Device Package:
TO-92-3
Packaging:
Bulk
Power - Max:
625 mW
Base Product Number:
J109
ECCN:
EAR99
