Configuration:
Single
Dimensions:
2.92 x 1.3 x 0.93mm
Mounting Type:
Surface Mount
Maximum Gate Source Voltage:
-35 V
Idss Drain-Source Cut-off Current:
min. 2mA
Source Gate On-Capacitance:
28pF
Height:
0.93mm
Width:
1.3mm
Length:
2.92mm
Maximum Drain Source Resistance:
100 Ω
Package Type:
SOT-23
Maximum Drain Gate Voltage:
35V
Minimum Operating Temperature:
-55 °C
Drain Gate On-Capacitance:
28pF
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
REACH Status:
REACH Unaffected
Voltage - Cutoff (VGS off) @ Id:
500 mV @ 1 µA
edacadModel:
MMBFJ113 Models
FET Type:
N-Channel
Resistance - RDS(On):
100 Ohms
edacadModelUrl:
/en/models/1049302
Manufacturer:
onsemi
Voltage - Breakdown (V(BR)GSS):
35 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
17 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
-
Mounting Type:
Surface Mount
Current - Drain (Idss) @ Vds (Vgs=0):
2 mA @ 15 V
Series:
-
Supplier Device Package:
SOT-23-3
Packaging:
Tape & Reel (TR)
Power - Max:
350 mW
Base Product Number:
MMBFJ1
ECCN:
EAR99