Bourns BIDD05N60T Single Diode IGBT, 5 A 600 V TO-252

BIDD05N60T Bourns  Single Diode IGBT, 5 A 600 V TO-252
Bourns

Product Information

Maximum Power Dissipation:
82 W
Maximum Collector Emitter Voltage:
600 V
Number of Transistors:
1
Maximum Continuous Collector Current:
5 A
Maximum Gate Emitter Voltage:
±30V
Package Type:
TO-252
Configuration:
Single Diode
RoHs Compliant
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This is Single Diode IGBT 5 A 600 V TO-252 manufactured by Bourns. The manufacturer part number is BIDD05N60T. Provides up to 82 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). It has 1 transistors . The product has a maximum 5 a continuous collector current . It offers a maximum ±30v gate emitter voltage . The package is a sort of to-252. The product is available in single diode configuration.

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Datasheet - BIDD05N60T(Technical Reference)

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