Name: DF200R07W2H3B77BPSA1, Infineon
Brand: Infineon
SKU: ET24138564
Price: 37.05 GBP
Availability: InStock

DF200R07W2H3B77BPSA1 Infineon IGBT Module, 40 A, 70 A 650 V

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Product Information

Maximum Power Dissipation:

20 mW

Maximum Collector Emitter Voltage:

650 V

Number of Transistors:

Maximum Continuous Collector Current:

40 A, 70 A

Maximum Gate Emitter Voltage:

±20V

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This is IGBT Module 40 A 70 A 650 V manufactured by Infineon. The manufacturer part number is DF200R07W2H3B77BPSA1. Provides up to 20 mw maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 4 transistors . The product has a maximum 40 a, 70 a continuous collector current . It offers a maximum ±20v gate emitter voltage .

Datasheet - DF200R07W2H3B77BPSA1(Technical Reference)

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You can order Infineon brand products with DF200R07W2H3B77BPSA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

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Infineon DF200R07W2H3B77BPSA1 IGBT Module, 40 A, 70 A 650 V

DF200R07W2H3B77BPSA1

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