Infineon FZ900R12KE4HOSA1 IGBT Module, 900 A 1200 V

FZ900R12KE4HOSA1 Infineon  IGBT Module, 900 A 1200 V
Infineon

Product Information

Maximum Power Dissipation:
4.3 kW
Maximum Collector Emitter Voltage:
1200 V
Number of Transistors:
1
Maximum Continuous Collector Current:
900 A
Maximum Gate Emitter Voltage:
±20V
RoHs Compliant
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This is IGBT Module 900 A 1200 V manufactured by Infineon. The manufacturer part number is FZ900R12KE4HOSA1. Provides up to 4.3 kw maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 1 transistors . The product has a maximum 900 a continuous collector current . It offers a maximum ±20v gate emitter voltage .

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Datasheet - FZ900R12KE4HOSA1(Technical Reference)

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