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Infineon FP75R12KT4B11BOSA1 IGBT Module, 75 A 1200 V

FP75R12KT4B11BOSA1 Infineon IGBT Module, 75 A 1200 V
FP75R12KT4B11BOSA1 Infineon IGBT Module, 75 A 1200 V
Infineon

Product Information

Maximum Power Dissipation Pd:
385W
Maximum Gate Emitter Voltage VGEO:
20 V
Series:
FP75R12KT4B11B
Number of Transistors:
7
Maximum Collector Emitter Saturation Voltage VceSAT:
2.15V
Height:
17mm
Width:
62 mm
Length:
122mm
Standards/Approvals:
RoHS
Minimum Operating Temperature:
-40°C
Maximum Collector Emitter Voltage Vceo:
1200V
Product Type:
IGBT Module
Maximum Operating Temperature:
150°C
Automotive Standard:
No
RoHs Compliant
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This is IGBT Module 75 A 1200 V manufactured by Infineon. The manufacturer part number is FP75R12KT4B11BOSA1. The product fp75r12kt4b11b, is a highly preferred choice for users. It has 7 transistors . In addition, the height is 17mm. Furthermore, the product is 62 mm wide. Its accurate length is 122mm. Whereas, the minimum operating temperature of the product is -40°c. igbt module is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 150°c. The product complies with automotive standard - no.

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Datasheet - FP75R12KT4B11BOSA1(Technical Reference)

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You can order Infineon brand products with FP75R12KT4B11BOSA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in IGBTs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon FP75R12KT4B11BOSA1 IGBT Module, 75 A 1200 V. You can also check on our website or by contacting our customer support team for further order details on Infineon FP75R12KT4B11BOSA1 IGBT Module, 75 A 1200 V.
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