Infineon FP75R12KT3BOSA1 IGBT Module, 105 A 1200 V EconoPIM

FP75R12KT3BOSA1 Infineon  IGBT Module, 105 A 1200 V EconoPIM
Infineon

Product Information

Maximum Power Dissipation:
355 W
Maximum Collector Emitter Voltage:
1200 V
Number of Transistors:
7
Maximum Continuous Collector Current:
105 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
EconoPIM
RoHs Compliant
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This is IGBT Module 105 A 1200 V EconoPIM manufactured by Infineon. The manufacturer part number is FP75R12KT3BOSA1. Provides up to 355 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 7 transistors . The product has a maximum 105 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of econopim.

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Datasheet - FP75R12KT3BOSA1(Technical Reference)

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