Infineon FP75R12KT3BOSA1 IGBT Module, 105 A 1200 V EconoPIM

Infineon

Product Information

Maximum Power Dissipation Pd:
355W
Maximum Gate Emitter Voltage VGEO:
20 V
Series:
FP75R12KT3B
Number of Transistors:
7
Maximum Collector Emitter Saturation Voltage VceSAT:
2.15V
Height:
17mm
Width:
62 mm
Length:
122mm
Package Type:
EconoPIM
Minimum Operating Temperature:
-40°C
Standards/Approvals:
RoHS
Maximum Collector Emitter Voltage Vceo:
1200V
Product Type:
IGBT Module
Maximum Operating Temperature:
150°C
Automotive Standard:
No
RoHs Compliant
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This is IGBT Module 105 A 1200 V EconoPIM manufactured by Infineon. The manufacturer part number is FP75R12KT3BOSA1. The product fp75r12kt3b, is a highly preferred choice for users. It has 7 transistors . In addition, the height is 17mm. Furthermore, the product is 62 mm wide. Its accurate length is 122mm. The package is a sort of econopim. Whereas, the minimum operating temperature of the product is -40°c. igbt module is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 150°c. The product complies with automotive standard - no.

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Datasheet - FP75R12KT3BOSA1(Technical Reference)

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