Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V

Infineon

Product Information

Maximum Power Dissipation Pd:
175W
Maximum Gate Emitter Voltage VGEO:
20 V
Series:
FP25R12W2T4B
Number of Transistors:
7
Maximum Collector Emitter Saturation Voltage VceSAT:
2.25V
Height:
12mm
Width:
42.5 mm
Length:
51mm
Standards/Approvals:
RoHS
Minimum Operating Temperature:
-40°C
Maximum Collector Emitter Voltage Vceo:
1200V
Product Type:
IGBT Module
Maximum Operating Temperature:
150°C
Automotive Standard:
No
RoHs Compliant
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This is IGBT Module 39 A 1200 V manufactured by Infineon. The manufacturer part number is FP25R12W2T4BOMA1. The product fp25r12w2t4b, is a highly preferred choice for users. It has 7 transistors . In addition, the height is 12mm. Furthermore, the product is 42.5 mm wide. Its accurate length is 51mm. Whereas, the minimum operating temperature of the product is -40°c. igbt module is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 150°c. The product complies with automotive standard - no.

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Datasheet - FP25R12W2T4BOMA1(Technical Reference)

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