Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V

FP25R12W2T4BOMA1 Infineon  IGBT Module, 39 A 1200 V
Infineon

Product Information

Maximum Power Dissipation:
175 W
Maximum Collector Emitter Voltage:
1200 V
Number of Transistors:
7
Maximum Continuous Collector Current:
39 A
Maximum Gate Emitter Voltage:
+/-20V
RoHs Compliant
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This is IGBT Module 39 A 1200 V manufactured by Infineon. The manufacturer part number is FP25R12W2T4BOMA1. Provides up to 175 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 7 transistors . The product has a maximum 39 a continuous collector current . It offers a maximum +/-20v gate emitter voltage .

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Datasheet - FP25R12W2T4BOMA1(Technical Reference)

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