Infineon FP100R12KT4B11BOSA1 IGBT Module, 100 A 1200 V

FP100R12KT4B11BOSA1 Infineon  IGBT Module, 100 A 1200 V
Infineon

Product Information

Maximum Power Dissipation:
515 W
Maximum Collector Emitter Voltage:
1200 V
Number of Transistors:
7
Maximum Continuous Collector Current:
100 A
Maximum Gate Emitter Voltage:
+/-20V
RoHs Compliant
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This is IGBT Module 100 A 1200 V manufactured by Infineon. The manufacturer part number is FP100R12KT4B11BOSA1. Provides up to 515 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 7 transistors . The product has a maximum 100 a continuous collector current . It offers a maximum +/-20v gate emitter voltage .

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Datasheet - FP100R12KT4B11BOSA1(Technical Reference)

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FAQs

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