onsemi FGAF40S65AQ

FGAF40S65AQ onsemi
FGAF40S65AQ
onsemi

Product Information

Dimensions:
15.7 x 5.7 x 24.7mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
94 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-3PF
Minimum Operating Temperature:
-55 °C
Gate Capacitance:
2590pF
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Energy Rating:
325mJ
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
80 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Switching Energy:
132µJ (on), 62µJ (off)
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 40A
Voltage - Collector Emitter Breakdown (Max):
650 V
Td (on/off) @ 25°C:
17.8ns/81.6ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-3P-3 Full Pack
Gate Charge:
75 nC
Reverse Recovery Time (trr):
274 ns
REACH Status:
REACH Unaffected
Test Condition:
400V, 10A, 6Ohm, 15V
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
160 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3PF-3
Power - Max:
94 W
Base Product Number:
FGAF40
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is FGAF40S65AQ. The given dimensions of the product include 15.7 x 5.7 x 24.7mm. The product is available in through hole configuration. Provides up to 94 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-3pf. Whereas, the minimum operating temperature of the product is -55 °c. It has approximately 2590pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. It has approximately 325mj energy rating . The product offers single transistor configuration. The maximum collector current includes 80 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 132µj (on), 62µj (off). Features 2.1v @ 15v, 40a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 17.8ns/81.6ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3 full pack. Features 75 nc gate charge. It has a trr (reverse recovery time) of 274 ns. In addition, it is reach unaffected. Test condition included 400v, 10a, 6ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-3pf-3 is the supplier device package value. The maximum power of the product is 94 w. Moreover, it corresponds to fgaf40, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet FGAF40S65AQ(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Mult Dev Wafer Fab Chgs 30/Apr/2020(PCN Assembly/Origin)
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FGAF40S65AQ Mark Chg 13/Feb/2020(PCN Design/Specification)
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Mult Dev EOL 02/Oct/2023(PCN Obsolescence/ EOL)
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FGAF40S65AQ(Datasheets)

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET21517884 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21517884.
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