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This is manufactured by onsemi. The manufacturer part number is AFGY100T65SPD. Provides up to 660 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 100 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 120 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 5.1mj (on), 2.7mj (off). Features 2.05v @ 15v, 100a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 36ns/78ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 109 nc gate charge. It has a trr (reverse recovery time) of 105 ns. In addition, it is reach unaffected. Test condition included 400v, 100a, 5ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. It has a long 12 weeks standard lead time. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. The product is automotive, a grade of class. to-247-3 is the supplier device package value. The maximum power of the product is 660 w. Moreover, it corresponds to afgy100, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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