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This is IGBT 120 A 650 V 3-Pin TO-3PN Through Hole manufactured by onsemi. The manufacturer part number is FGA60N65SMD. The given dimensions of the product include 15.8 x 5 x 20.1mm. The product is available in through hole configuration. Provides up to 600 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 120 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-3pn. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 120 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 1.54mj (on), 450µj (off). Features 2.5v @ 15v, 60a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 18ns/104ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 189 nc gate charge. It has a trr (reverse recovery time) of 47 ns. In addition, it is reach unaffected. Test condition included 400v, 60a, 3ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. It has a long 33 weeks standard lead time. Features an IGBT field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-3p is the supplier device package value. The maximum power of the product is 600 w. Moreover, it corresponds to fga60n65, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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