onsemi FGB7N60UNDF IGBT, 14 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

FGB7N60UNDF onsemi  IGBT, 14 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount
FGB7N60UNDF
FGB7N60UNDF
onsemi

Product Information

Dimensions:
10.67 x 9.65 x 4.83mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
83 W
Maximum Collector Emitter Voltage:
600 V
Minimum Operating Temperature:
-55 °C
Channel Type:
N
Maximum Continuous Collector Current:
14 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
D2PAK (TO-263)
Pin Count:
3
Maximum Operating Temperature:
+150 °C
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
14 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Switching Energy:
99µJ (on), 104µJ (off)
Vce(on) (Max) @ Vge, Ic:
2.3V @ 15V, 7A
Voltage - Collector Emitter Breakdown (Max):
600 V
Td (on/off) @ 25°C:
5.9ns/32.3ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Gate Charge:
18 nC
Reverse Recovery Time (trr):
32.3 ns
REACH Status:
REACH Unaffected
Test Condition:
400V, 7A, 10Ohm, 15V
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
IGBT Type:
NPT
Current - Collector Pulsed (Icm):
21 A
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-263 (D2PAK)
Power - Max:
83 W
Base Product Number:
FGB7N60
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is IGBT 14 A 600 V 3-Pin D2PAK (TO-263) Surface Mount manufactured by onsemi. The manufacturer part number is FGB7N60UNDF. The given dimensions of the product include 10.67 x 9.65 x 4.83mm. The product is available in surface mount configuration. Provides up to 83 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. The product has a maximum 14 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of d2pak (to-263). It contains 3 pins. It has a maximum operating temperature of +150 °c. The product offers single transistor configuration. The maximum collector current includes 14 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 99µj (on), 104µj (off). Features 2.3v @ 15v, 7a. The maximum collector emitter breakdown voltage of the product is 600 v. Td (on/off) value of 5.9ns/32.3ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. Features 18 nc gate charge. It has a trr (reverse recovery time) of 32.3 ns. In addition, it is reach unaffected. Test condition included 400v, 7a, 10ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT npt type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-263 (d2pak) is the supplier device package value. The maximum power of the product is 83 w. Moreover, it corresponds to fgb7n60, a base product number of the product. The product is designated with the ear99 code number.

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FGB7N60UNDF, 600V, 7A Short Circuit Rated IGBT(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Wafer Size Update 29/Sep/2014(PCN Assembly/Origin)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 29/Jan/2021(PCN Obsolescence/ EOL)
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FGB7N60UNDF(Datasheets)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)
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TO263 31/Aug/2016(PCN Packaging)

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