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This is manufactured by STMicroelectronics. The manufacturer part number is STGW75H65DFB2-4. Provides up to 357 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product has a maximum 115 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. It contains 4 pins. The maximum collector current includes 115 a. It has a trr (reverse recovery time) of 88 ns. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 992µj (on), 766µj (off). Features 2v @ 15v, 75a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 22ns/121ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-4. Features 207 nc gate charge. In addition, it is reach unaffected. Test condition included 400v, 75a, 10ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 18 weeks standard lead time. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. The product hb2, is a highly preferred choice for users. to-247-4 is the supplier device package value. The maximum power of the product is 357 w. Moreover, it corresponds to stgw75, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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