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This is manufactured by STMicroelectronics. The manufacturer part number is STGB30H65DFB2. Provides up to 167 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product has a maximum 50 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of d2pak (to-263). It contains 3 pins. The maximum collector current includes 50a. It features igbt trench field stop 650v 50a 167w surface mount d2pak-3. Features 2.1v @ 15v, 30a. Td (on/off) value of 18.4ns/71ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-263-4, d²pak (3 leads + tab), to-263aa. Features 90nc gate charge. The maximum collector emitter breakdown voltage of the product is 650v. It has a trr (reverse recovery time) of 115ns. Provide switching energy up to 270µj (on), 310µj (off). Test condition included 400v, 30a, 6.8ohm, 15v. The stmicroelectronics's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in surface mount configuration. The product hb2, is a highly preferred choice for users. d2pak-3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 167w.
For more information please check the datasheets.
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