650V 80A Field Stop Trench IGBT

ROHM

Product Information

Dimensions:
16 x 5 x 21mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
404 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
144 A
Maximum Gate Emitter Voltage:
±30V
Package Type:
TO-247N
Minimum Operating Temperature:
-40 °C
Gate Capacitance:
184pF
Maximum Operating Temperature:
175 °C
Pin Count:
3
Energy Rating:
119.3mJ
Transistor Configuration:
Single
RoHs Compliant
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This is 650V 80A Field Stop Trench IGBT manufactured by ROHM. The manufacturer part number is RGTVX6TS65DGC11. The given dimensions of the product include 16 x 5 x 21mm. The product is available in through hole configuration. Provides up to 404 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 144 a continuous collector current . It offers a maximum ±30v gate emitter voltage . The package is a sort of to-247n. Whereas, the minimum operating temperature of the product is -40 °c. It has approximately 184pf gate capacitance . It has a maximum operating temperature of 175 °c. It contains 3 pins. It has approximately 119.3mj energy rating . The product offers single transistor configuration.

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Datasheet RGTVX6TS65DGC11(Technical Reference)

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