650V 50A Field Stop Trench IGBT

RGW00TK65GVC11 650V 50A Field Stop Trench IGBT
ROHM

Product Information

Dimensions:
16 x 5 x 21mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
89 W
Maximum Collector Emitter Voltage:
1.5 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
26 A
Maximum Gate Emitter Voltage:
±30V
Package Type:
TO-3PFM
Minimum Operating Temperature:
-40 °C
Switching Speed:
1MHz
Gate Capacitance:
4200pF
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is 650V 50A Field Stop Trench IGBT manufactured by ROHM. The manufacturer part number is RGW00TK65GVC11. The given dimensions of the product include 16 x 5 x 21mm. The product is available in through hole configuration. Provides up to 89 w maximum power dissipation. Whereas features a 1.5 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 26 a continuous collector current . It offers a maximum ±30v gate emitter voltage . The package is a sort of to-3pfm. Whereas, the minimum operating temperature of the product is -40 °c. It has about 1mhz switching speed . It has approximately 4200pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)

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