ROHM RGT30TM65DGC9 P-channel IGBT, 14 A 650 (Minimum) V, 3+Tab-Pin TO-220NFM

RGT30TM65DGC9 ROHM  P-channel IGBT, 14 A 650 (Minimum) V, 3+Tab-Pin TO-220NFM
ROHM

Product Information

Dimensions:
10 x 4.5 x 15mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
32 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
P
Maximum Continuous Collector Current:
14 A
Maximum Gate Emitter Voltage:
30V
Package Type:
TO-220NFM
Minimum Operating Temperature:
-40 °C
Gate Capacitance:
780pF
Maximum Operating Temperature:
+175 °C
Pin Count:
3+Tab
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is P-channel IGBT 14 A 650 (Minimum) V 3+Tab-Pin TO-220NFM manufactured by ROHM. The manufacturer part number is RGT30TM65DGC9. The given dimensions of the product include 10 x 4.5 x 15mm. The product is available in through hole configuration. Provides up to 32 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 14 a continuous collector current . It offers a maximum 30v gate emitter voltage . The package is a sort of to-220nfm. Whereas, the minimum operating temperature of the product is -40 °c. It has approximately 780pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3+tab pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of ROHM RGT30TM65DGC9 P-channel IGBT, 14 A 650 (Minimum) V, 3+Tab-Pin TO-220NFM. You can also check on our website or by contacting our customer support team for further order details on ROHM RGT30TM65DGC9 P-channel IGBT, 14 A 650 (Minimum) V, 3+Tab-Pin TO-220NFM.
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