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This is manufactured by ON Semiconductor. The manufacturer part number is FGPF10N60UNDF. The given dimensions of the product include 10.36 x 4.9 x 16.07mm. The product is available in through hole configuration. Provides up to 42 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 20 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-220f. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 20a. It features igbt npt 600v 20a 42w through hole to-220f-3. Features 2.45v @ 15v, 10a. Td (on/off) value of 8ns/52.2ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-220-3 full pack. Features 37nc gate charge. Base Part Number: fgpf10. The maximum collector emitter breakdown voltage of the product is 600v. It has a trr (reverse recovery time) of 37.7ns. Provide switching energy up to 150µj (on), 50µj (off). Test condition included 400v, 10a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT npt type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-220f-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 42w.
For more information please check the datasheets.
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