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This is manufactured by ON Semiconductor. The manufacturer part number is FGA30N65SMD. The given dimensions of the product include 16.2 x 5 x 20.1mm. The product is available in through hole configuration. Provides up to 300 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 60 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-3pn. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 60a. It features igbt field stop 650v 60a 300w through hole to-3pn. Features 2.5v @ 15v, 30a. Td (on/off) value of 14ns/102ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 87nc gate charge. Base Part Number: fga30n65. The maximum collector emitter breakdown voltage of the product is 650v. It has a trr (reverse recovery time) of 35ns. Provide switching energy up to 716µj (on), 208µj (off). Test condition included 400v, 30a, 6ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-3pn is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 300w.
For more information please check the datasheets.
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