Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P

GT30J121 Toshiba  IGBT, 30 A 600 V, 3-Pin TO-3P
Toshiba

Product Information

Dimensions:
15.9 x 4.8 x 20mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
170 W
Maximum Collector Emitter Voltage:
600 V
Channel Type:
N
Maximum Continuous Collector Current:
30 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-3P
Switching Speed:
1MHz
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is IGBT 30 A 600 V 3-Pin TO-3P manufactured by Toshiba. The manufacturer part number is GT30J121. The given dimensions of the product include 15.9 x 4.8 x 20mm. The product is available in through hole configuration. Provides up to 170 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 30 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-3p. It has about 1mhz switching speed . It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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ESD Control Selection Guide V1(Technical Reference)
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GT30J121, Silicon N-Channel IGBT Data Sheet(Technical Reference)

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