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Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P

GT30J121 Toshiba IGBT, 30 A 600 V, 3-Pin TO-3P
GT30J121 Toshiba IGBT, 30 A 600 V, 3-Pin TO-3P
Toshiba

Product Information

Automotive Standard:
No
Maximum Power Dissipation Pd:
170W
Maximum Gate Emitter Voltage VGEO:
?20 V
Maximum Collector Emitter Voltage Vceo:
600V
Maximum Collector Emitter Saturation Voltage VceSAT:
2.45V
Channel Type:
Type N
Package Type:
TO-3P
Minimum Operating Temperature:
-55?C
Maximum Continuous Collector Current Ic:
30A
Standards/Approvals:
RoHS
Switching Speed:
1MHz
Product Type:
Insulated Gate Bipolar Transistor
Maximum Operating Temperature:
150?C
Pin Count:
3
Mount Type:
Through Hole
RoHs Compliant
50 - In Stock

Ships in 5-7 business days

Each (In a Tube of 50)

Quantity
Unit Price (ex VAT)
Price
50
£ 2.48
£ 124.00
Mfr Part No:
GT30J121
Seller:
Toshiba
Origin:
Warranty:
Manufacturer
Data Code:
ET13996380
Order Today!
From: United Kingdom
Est Ship Date: 08 Jun, 2026
Est Fastest Delivery: 10 Jun, 2026

This is IGBT 30 A 600 V 3-Pin TO-3P manufactured by Toshiba. The manufacturer part number is GT30J121. The product complies with automotive standard - no. The product is available in [Cannel Type] channel. The package is a sort of to-3p. Whereas, the minimum operating temperature of the product is -55?c. It has about 1mhz switching speed . insulated gate bipolar transistor is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 150?c. It contains 3 pins. It has a through hole type mount .

pdf icon
ESD Control Selection Guide V1(Technical Reference)
pdf icon
GT30J121, Silicon N-Channel IGBT Data Sheet(Technical Reference)

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