Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P

Toshiba

Product Information

Automotive Standard:
No
Maximum Power Dissipation Pd:
230W
Maximum Gate Emitter Voltage VGEO:
?25 V
Maximum Collector Emitter Voltage Vceo:
600V
Series:
6.5th generation
Maximum Collector Emitter Saturation Voltage VceSAT:
2.2V
Channel Type:
Type N
Package Type:
TO-3P
Minimum Operating Temperature:
-55?C
Maximum Continuous Collector Current Ic:
50A
Standards/Approvals:
RoHS
Switching Speed:
1MHz
Product Type:
Discrete IGBT
Maximum Operating Temperature:
175?C
Pin Count:
3
Mount Type:
Through Hole
RoHs Compliant
73 - In Stock

Ships in 5-7 business days

Each (In a Tube of 25)

Quantity
Unit Price (ex VAT)
Price
25
£ 3.55
£ 88.75
Mfr Part No:
GT50JR22
Seller:
Toshiba
Origin:
Warranty:
Manufacturer
Data Code:
ET13941578
Order Today!
From: United Kingdom
Est Ship Date: 05 Jun, 2026
Est Fastest Delivery: 09 Jun, 2026

This is IGBT 50 A 600 V 3-Pin TO-3P manufactured by Toshiba. The manufacturer part number is GT50JR22. The product complies with automotive standard - no. The product 6.5th generation, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of to-3p. Whereas, the minimum operating temperature of the product is -55?c. It has about 1mhz switching speed . discrete igbt is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 175?c. It contains 3 pins. It has a through hole type mount .

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GT50JR22, Silicon N-Channel IGBT Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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