GT15J341 Toshiba IGBT, 15 A 600 V, 3-Pin TO-220SIS

GT15J341  Toshiba IGBT, 15 A 600 V, 3-Pin TO-220SIS
GT15J341
Toshiba

Product Information

Dimensions:
10 x 4.5 x 15mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
30 W
Maximum Collector Emitter Voltage:
600 V
Channel Type:
N
Maximum Continuous Collector Current:
15 A
Maximum Gate Emitter Voltage:
±25V
Package Type:
TO-220SIS
Switching Speed:
100kHz
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is IGBT 15 A 600 V 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is GT15J341. The given dimensions of the product include 10 x 4.5 x 15mm. The product is available in through hole configuration. Provides up to 30 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 15 a continuous collector current . It offers a maximum ±25v gate emitter voltage . The package is a sort of to-220sis. It has about 100khz switching speed . It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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GT15J341, Silicon N-Channel IGBT Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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