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This is manufactured by STMicroelectronics. The manufacturer part number is STGW80H65DFB. The given dimensions of the product include 15.75 x 5.15 x 20.15mm. The product is available in through hole configuration. Provides up to 469 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 120 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 120 a. It has a trr (reverse recovery time) of 85 ns. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 2.1mj (on), 1.5mj (off). Features 2v @ 15v, 80a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 84ns/280ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 414 nc gate charge. In addition, it is reach unaffected. Test condition included 400v, 80a, 10ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 18 weeks standard lead time. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247 is the supplier device package value. The maximum power of the product is 469 w. Moreover, it corresponds to stgw80, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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