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This is ON Semiconductor 3 Phase IGBT Module 35 A 650 V DIP26 Through Hole manufactured by onsemi. The manufacturer part number is NXH50C120L2C2ESG. The product is available in through hole configuration. Whereas features a 650 v of collector emitter voltage (max). It has 6 transistors . The product is available in [Cannel Type] channel. The product has a maximum 35 a continuous collector current . It offers a maximum ±20.0v gate emitter voltage . The package is a sort of dip26. The product is available in 3 phase configuration. The maximum collector current includes 50 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.4v @ 15v, 50a. The maximum collector emitter breakdown voltage of the product is 1200 v. The product has -40°c ~ 150°c (tj) operating temperature range. It holds 11.897 nf @ 20 v of input capacitance. Moreover, the product comes in 26-powerdip module (1.199", 47.20mm). Its input values include three phase bridge rectifier. NTC Thermistor - yes. In addition, it is reach unaffected. The product is available in three phase inverter with brake configuration. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. In addition, 250 µa is the maximum current at collector cutoff. 26-dip is the supplier device package value. The maximum power of the product is 20 mw. Moreover, it corresponds to nxh50, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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