Configuration:
Single
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Gate Source Voltage:
-35 V
Idss Drain-Source Cut-off Current:
Min. 5mA
Source Gate On-Capacitance:
28pF
Height:
5.33mm
Width:
4.19mm
Length:
5.2mm
Maximum Drain Source Resistance:
50 Ω
Package Type:
TO-92
Maximum Drain Gate Voltage:
35V
Minimum Operating Temperature:
-55 °C
Drain Gate On-Capacitance:
28pF
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
J112
Detailed Description:
JFET N-Channel 35V 625mW Through Hole TO-92-3
Voltage - Breakdown (V(BR)GSS):
35V
Mounting Type:
Through Hole
Current - Drain (Idss) @ Vds (Vgs=0):
5mA @ 15V
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Resistance - RDS(On):
50 Ohms
Voltage - Cutoff (VGS off) @ Id:
1V @ 1µA
Supplier Device Package:
TO-92-3
Packaging:
Bulk
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Power - Max:
625mW
Manufacturer:
ON Semiconductor
