onsemi FPF2G120BF07AS

FPF2G120BF07AS onsemi
onsemi

Product Information

Current - Collector (Ic) (Max):
40 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Vce(on) (Max) @ Vge, Ic:
2.2V @ 15V, 40A
Voltage - Collector Emitter Breakdown (Max):
650 V
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
Module
Input:
Standard
NTC Thermistor:
Yes
title:
FPF2G120BF07AS
REACH Status:
REACH Unaffected
Configuration:
3 Independent
Manufacturer:
onsemi
Moisture Sensitivity Level (MSL):
1 (Unlimited)
IGBT Type:
Field Stop
Current - Collector Cutoff (Max):
250 µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
F2
Packaging:
Tray
Power - Max:
156 W
Base Product Number:
FPF2G120
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is FPF2G120BF07AS. The maximum collector current includes 40 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.2v @ 15v, 40a. The maximum collector emitter breakdown voltage of the product is 650 v. The product has -40°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in module. Its input values include standard. NTC Thermistor - yes. In addition, it is reach unaffected. The product is available in 3 independent configuration. The onsemi's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT field stop type. In addition, 250 µa is the maximum current at collector cutoff. The product is available in through hole configuration. f2 is the supplier device package value. In addition, tray is the available packaging type of the product. The maximum power of the product is 156 w. Moreover, it corresponds to fpf2g120, a base product number of the product. The product is designated with the ear99 code number.

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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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FPF2GYYY 06/Feb/2019(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 29/Jan/2021(PCN Obsolescence/ EOL)
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Mult Devices 24/Oct/2017(PCN Packaging)
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SiC MOSFETs: Gate Drive Optimization(Other Related Documents)

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FAQs

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