ON Semiconductor 2N4918

2N4918 ON Semiconductor
2N4918
ON Semiconductor

Product Information

Base Part Number:
2N4918
Detailed Description:
Bipolar (BJT) Transistor PNP 40V 1A 3MHz 30W Through Hole TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 500mA, 1V
Transistor Type:
PNP
Frequency - Transition:
3MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
600mV @ 100mA, 1A
Supplier Device Package:
TO-126
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
30W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
500µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is 2N4918. Base Part Number: 2n4918. It features bipolar (bjt) transistor pnp 40v 1a 3mhz 30w through hole to-126. Furthermore, 30 @ 500ma, 1v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 3mhz. The product is available in through hole configuration. The 600mv @ 100ma, 1a is the maximum Vce saturation. to-126 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 30w. Moreover, the product comes in to-225aa, to-126-3. The maximum collector current includes 1a. In addition, 500µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 06/Oct/2006(PCN Obsolescence/ EOL)
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2N4918-4920(Datasheets)

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