Fairchild FSB660A PNP Transistor, 2 A, 60 V, 3-Pin SOT-23

FSB660A Fairchild  PNP Transistor, 2 A, 60 V, 3-Pin SOT-23
Fairchild Semiconductor

Product Information

Dimensions:
2.92 x 1.4 x 0.94mm
Maximum Collector Emitter Saturation Voltage:
-300 mV
Width:
1.4mm
Transistor Configuration:
Single
Maximum Operating Frequency:
75 MHz
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
-60 V
Maximum Base Emitter Saturation Voltage:
-1.25 V
Maximum Emitter Base Voltage:
-5 V
Length:
2.92mm
Maximum DC Collector Current:
2 A
Pin Count:
3
Minimum DC Current Gain:
40
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Maximum Collector Emitter Voltage:
60 V
Height:
0.94mm
Minimum Operating Temperature:
-55 °C
Current - Collector (Ic) (Max):
2 A
HTSUS:
8541.21.0095
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
250 @ 500mA, 2V
Frequency - Transition:
75MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max):
60 V
Transistor Type:
PNP
Package:
Bulk
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3
Power - Max:
500 mW
ECCN:
EAR99
RoHs Compliant
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This is Fairchild PNP Transistor 2 A 60 V 3-Pin SOT-23 manufactured by Fairchild Semiconductor. The manufacturer part number is FSB660A. The given dimensions of the product include 2.92 x 1.4 x 0.94mm. The product has a maximum -300 mv collector emitter saturation voltage . Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. It carries 75 mhz of maximum operating frequency. The package is a sort of sot-23. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a pnp type. Additionally, it has -60 v maximum collector base voltage. In addition, the product has a maximum -1.25 v base emitter saturation voltage . It features a -5 v of maximum emitter base voltage. Its accurate length is 2.92mm. Moreover, it has a maximum DC collector current of 2 a. It contains 3 pins. It features up to 40 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. Whereas features a 60 v of collector emitter voltage (max). In addition, the height is 0.94mm. Whereas, the minimum operating temperature of the product is -55 °c. The maximum collector current includes 2 a. It is assigned with possible HTSUS value of 8541.21.0095. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 250 @ 500ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 75mhz. The 300mv @ 200ma, 2a is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 60 v. It is shipped in bulk package . In addition, 100na (icbo) is the maximum current at collector cutoff. sot-23-3 is the supplier device package value. The maximum power of the product is 500 mw. The product is designated with the ear99 code number.

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FSB660A, PNP Low Saturation Transistor Data Sheet(Technical Reference)

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