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This is manufactured by Goford Semiconductor. The manufacturer part number is G2014. The FET features of the product include standard. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 900mv @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-wdfn exposed pad. It has a maximum Rds On and voltage of 7mohm @ 5a, 10v. The maximum gate charge and given voltages include 17.5 nc @ 4.5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 3w (tc). The product's input capacitance at maximum includes 1710 pf @ 10 v. It has a long 8 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 6-dfn (2x2) is the supplier device package value. The continuous current drain at 25°C is 14a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
For more information please check the datasheets.
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