Fairchild Semiconductor SFS9640

SFS9640 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
500mOhm @ 3.1A, 10V
title:
SFS9640
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Affected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
40W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1585 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
59 nC @ 10 V
Supplier Device Package:
TO-220F
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
6.2A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is SFS9640. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 500mohm @ 3.1a, 10v. The product is rohs3 compliant. In addition, it is reach affected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 200 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 40w (tc). The product's input capacitance at maximum includes 1585 pf @ 25 v. The product is available in through hole configuration. The maximum gate charge and given voltages include 59 nc @ 10 v. to-220f is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 6.2a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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