Fairchild Semiconductor RFD16N05

RFD16N05 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Rds On (Max) @ Id, Vgs:
47mOhm @ 16A, 10V
edacadModel:
RFD16N05 Models
Gate Charge (Qg) (Max) @ Vgs:
80 nC @ 20 V
RoHS Status:
RoHS non-compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/11554576
Package:
Tube
Drain to Source Voltage (Vdss):
50 V
Vgs (Max):
±20V
Power Dissipation (Max):
72W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
900 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
I-PAK
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RFD16
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is RFD16N05. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. It has a maximum Rds On and voltage of 47mohm @ 16a, 10v. The maximum gate charge and given voltages include 80 nc @ 20 v. The product is rohs non-compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 50 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 72w (tc). The product's input capacitance at maximum includes 900 pf @ 25 v. The product is available in through hole configuration. i-pak is the supplier device package value. The continuous current drain at 25°C is 16a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to rfd16, a base product number of the product. The product is designated with the ear99 code number.

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