Fairchild Semiconductor HRF3205

HRF3205 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
RoHS non-compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
8mOhm @ 59A, 10V
Gate Charge (Qg) (Max) @ Vgs:
170 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 250µA
edacadModel:
HRF3205 Models
FET Type:
N-Channel
edacadModelUrl:
/en/models/11527382
Drain to Source Voltage (Vdss):
55 V
Vgs (Max):
±20V
Power Dissipation (Max):
175W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4000 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is HRF3205. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs non-compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 8mohm @ 59a, 10v. The maximum gate charge and given voltages include 170 nc @ 10 v. The typical Vgs (th) (max) of the product is 4v @ 250µa. It carries FET type n-channel. The product has a 55 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 175w (tc). The product's input capacitance at maximum includes 4000 pf @ 25 v. The product is available in through hole configuration. to-220-3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 100a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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