Fairchild Semiconductor FDU8770

FDU8770 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Gate Charge (Qg) (Max) @ Vgs:
73 nC @ 10 V
RoHS Status:
ROHS3 Compliant
Rds On (Max) @ Id, Vgs:
4mOhm @ 35A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tube
Drain to Source Voltage (Vdss):
25 V
Vgs (Max):
±20V
Power Dissipation (Max):
115W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3720 pF @ 13 V
Mounting Type:
Through Hole
Series:
PowerTrench®
Supplier Device Package:
I-PAK
Current - Continuous Drain (Id) @ 25°C:
35A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FDU8770. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. The maximum gate charge and given voltages include 73 nc @ 10 v. The product is rohs3 compliant. It has a maximum Rds On and voltage of 4mohm @ 35a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tube package . The product has a 25 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 115w (tc). The product's input capacitance at maximum includes 3720 pf @ 13 v. The product is available in through hole configuration. The product powertrench®, is a highly preferred choice for users. i-pak is the supplier device package value. The continuous current drain at 25°C is 35a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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Yes. We ship FDU8770 Internationally to many countries around the world.