Texas Instruments CSD17575Q3 N-Channel MOSFET, 3 A, 30 V, 8-Pin VSONP

Enrgtech Part No: ET21585325
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Manufacturer Part No:
CSD17575Q3
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Manufacturer: Texas Instruments

CSD17575Q3 Texas Instruments N-Channel MOSFET, 3 A, 30 V, 8-Pin VSONP

Product Information

Maximum Drain Source Voltage:

30 V

Mounting Type:

Surface Mount

Channel Mode:

Enhancement

Series:

NexFET

Channel Type:

Maximum Gate Threshold Voltage:

1.1V

Maximum Drain Source Resistance:

2300000 Ω

Package Type:

VSONP

Number of Elements per Chip:

Maximum Continuous Drain Current:

3 A

Transistor Material:

Pin Count:

Checking for live stock

The Texas Instruments CSD17575Q3 is a high-efficiency N-channel NexFET™ power MOSFET designed for superior power conversion. It features an ultra-low on-resistance to minimise energy losses in demanding applications. This 30V device is housed in a compact 8-pin VSONP package for high-density layouts. It is ideal for networking, telecom, and computing systems. Its robust design ensures reliable performance across a wide temperature range. This component effectively optimises synchronous FET applications.

Why Do Users Prefer This Product?

This Texas Instruments CSD17575Q3 MOSFET maximises system efficiency through minimal power dissipation and high-speed switching capabilities. Its compact size saves PCB space.

Ultra-low resistance reduces heat.
Compact footprint enables high-density designs.

Main Features & Technical Data

Drain-to-Source Voltage (Vds): 30 V
Continuous Drain Current (Id): 60 A (at 25°C)
On-Resistance (Rds on): 2.3 mΩ at 10V
Package Type: 8-VSON-CLIP (3.3mm x 3.3mm)
Operating Temperature: -55°C to +150°C
Gate Charge (Qg): 23 nC typical at 4.5V
Mounting Type: Surface Mount (SMD/SMT)
RoHS Status: Compliant and Halogen-Free.

Multi Devices 23/Jun/2017(PCN Assembly/Origin)

Qualification Revision A 01/Jul/2014(PCN Design/Specification)

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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.

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