Infineon Technologies BSC0802LSATMA1

BSC0802LSATMA1 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
3.4mOhm @ 50A, 10V
title:
BSC0802LSATMA1
Vgs(th) (Max) @ Id:
2.3V @ 115µA
REACH Status:
REACH Unaffected
edacadModel:
BSC0802LSATMA1 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/12756122
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Power Dissipation (Max):
156W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6500 pF @ 50 V
Mounting Type:
Surface Mount
Series:
OptiMOS™ 5
Gate Charge (Qg) (Max) @ Vgs:
46 nC @ 4.5 V
Supplier Device Package:
PG-TDSON-8-7
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
20A (Ta), 100A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BSC0802
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is BSC0802LSATMA1. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 3.4mohm @ 50a, 10v. The typical Vgs (th) (max) of the product is 2.3v @ 115µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 156w (tc). The product's input capacitance at maximum includes 6500 pf @ 50 v. The product is available in surface mount configuration. The product optimos™ 5, is a highly preferred choice for users. The maximum gate charge and given voltages include 46 nc @ 4.5 v. pg-tdson-8-7 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 20a (ta), 100a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to bsc0802, a base product number of the product. The product is designated with the ear99 code number.

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Optimos Site/Mat Chgs 30/May/2022(PCN Assembly/Origin)
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Mult Dev Mould Chgs 22/Jun/2022(PCN Design/Specification)

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FAQs

Yes. You can also search BSC0802LSATMA1 on website for other similar products.
We accept all major payment methods for all products including ET20189879. Please check your shopping cart at the time of order.
You can order Infineon Technologies brand products with BSC0802LSATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies BSC0802LSATMA1. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies BSC0802LSATMA1.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET20189879 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET20189879.
Yes. We ship BSC0802LSATMA1 Internationally to many countries around the world.