Category:
Power MOSFET
Dimensions:
1.6 x 1.6 x 0.5mm
Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
MLP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.5 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
572 pF @ 15 V
Length:
1.6mm
Pin Count:
6
Typical Turn-Off Delay Time:
19 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.1 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±12 V
Height:
0.5mm
Typical Turn-On Delay Time:
7 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
71 mΩ
FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-PowerUFDFN
Rds On (Max) @ Id, Vgs:
40mOhm @ 6A, 4.5V
title:
FDME430NT
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
700mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
760 pF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs:
9 nC @ 4.5 V
Supplier Device Package:
MicroFet 1.6x1.6 Thin
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
6A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
