Maximum Continuous Drain Current:
104 A
Width:
3.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.15V
Package Type:
VSON-CLIP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.65V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10.8 nC @ 4.5 V
Channel Type:
P
Length:
3.4mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
96 W
Series:
NexFET
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
150 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 10A, 4.5V
title:
CSD25404Q3T
Vgs(th) (Max) @ Id:
1.15V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
CSD25404Q3T Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
edacadModelUrl:
/en/models/5764594
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.8W (Ta), 96W (Tc)
standardLeadTime:
12 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2120 pF @ 10 V
Mounting Type:
Surface Mount
Series:
NexFET™
Gate Charge (Qg) (Max) @ Vgs:
14.1 nC @ 4.5 V
Supplier Device Package:
8-VSONP (3x3.3)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
104A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD25404
ECCN:
EAR99
This is manufactured by Texas Instruments. The manufacturer part number is CSD25404Q3T. While 104 a of maximum continuous drain current. Furthermore, the product is 3.4mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1.15v of maximum gate threshold voltage. The package is a sort of vson-clip. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.65v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 10.8 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3.4mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 96 w maximum power dissipation. The product nexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 1.1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v . It provides up to 150 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 6.5mohm @ 10a, 4.5v. The typical Vgs (th) (max) of the product is 1.15v @ 250µa. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2.8w (ta), 96w (tc). It has a long 12 weeks standard lead time. The product's input capacitance at maximum includes 2120 pf @ 10 v. The product nexfet™, is a highly preferred choice for users. The maximum gate charge and given voltages include 14.1 nc @ 4.5 v. 8-vsonp (3x3.3) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 104a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to csd25404, a base product number of the product. The product is designated with the ear99 code number.
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