Category:
Power MOSFET
Dimensions:
10.66 x 4.83 x 16mm
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.9 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
365 pF @ 25 V
Length:
10.66mm
Pin Count:
3
Typical Turn-Off Delay Time:
24 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
114 W
Series:
HiperFET, Polar3
Maximum Gate Source Voltage:
±30 V
Height:
16mm
Typical Turn-On Delay Time:
15 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2.2 Ω
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
2.2Ohm @ 2A, 10V
title:
IXFP4N60P3
Vgs(th) (Max) @ Id:
5V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
114W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
365 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar3™
Gate Charge (Qg) (Max) @ Vgs:
6.9 nC @ 10 V
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFP4N60
ECCN:
EAR99
