Toshiba Semiconductor and Storage SSM3J353F,LF

SSM3J353F-LF Toshiba Semiconductor and Storage SSM3J353F,LF
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
150mOhm @ 2A, 10V
title:
SSM3J353F,LF
Vgs(th) (Max) @ Id:
2.2V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
SSM3J353F,LF Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
edacadModelUrl:
/en/models/6198763
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
+20V, -25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
600mW (Ta)
standardLeadTime:
40 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
159 pF @ 15 V
Mounting Type:
Surface Mount
Series:
U-MOSVI
Gate Charge (Qg) (Max) @ Vgs:
3.4 nC @ 4.5 V
Supplier Device Package:
S-Mini
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM3J353
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3J353F,LF. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has 150°c operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 150mohm @ 2a, 10v. The typical Vgs (th) (max) of the product is 2.2v @ 250µa. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The product has a 30 v drain to source voltage. The maximum Vgs rate is +20v, -25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 600mw (ta). It has a long 40 weeks standard lead time. The product's input capacitance at maximum includes 159 pf @ 15 v. The product is available in surface mount configuration. The product u-mosvi, is a highly preferred choice for users. The maximum gate charge and given voltages include 3.4 nc @ 4.5 v. s-mini is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 2a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm3j353, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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